Semiconductor laser
文献类型：专利
| 作者 | AIKI KUNIO; NAKAMURA MICHIHARU; UMEDA JIYUNICHI |
| 发表日期 | 1985-02-06 |
| 专利号 | JP1985024087A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain laser structure having high reliability by holding a semiconductor first layer between second and third layers, forbidden band width thereof are larger than that of the first layer and refractive indices thereof are smaller than that of the first layer, forming a stepped section to the second layer and forming a fourth region to a thin-film section of the outside of a light-emitting region. CONSTITUTION:A Ga1-yAlyAs first layer 12, a Ga1-xAlxAs second layer 11 and a third layer 13 are deposited on a GaAs or Ga1-zAlzAs substrate 10, to which a beltlike recessed groove is shaped, in predetermined order. 0<=z |
| 公开日期 | 1985-02-06 |
| 申请日期 | 1984-04-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77342]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | AIKI KUNIO,NAKAMURA MICHIHARU,UMEDA JIYUNICHI. Semiconductor laser. JP1985024087A. 1985-02-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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