Semiconductor laser
文献类型：专利
| 作者 | KATSUTA HIROHIKO |
| 发表日期 | 1987-09-29 |
| 专利号 | JP1987221185A |
| 著作权人 | FUJIKURA LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To perform light emission in two wavelength bands by means of a single element as well as to make the positions of emitting the light the same in the respective wavelength bands by a method wherein a first active layer and a second one are made to selectively emit light according to their respective wavelengths, and a waveguide layer is used as a common resonator to the light of the respective wavelengths. CONSTITUTION:This semiconductor laser possesses a first active layer 3 (5mum) which is provided on one side of the upper surface of a first clad layer 1, a second active layer (3mum) which is provided on the other side of the upper surface of the first clad layer 1 and has a band gap wavelength different from that of the first active layer 3, a waveguide layer 5 (15mum) which is provided on the upper surfaces of the first and second active layers and has a band gap wavelength smaller than that of each of these active layers, a second clad layer 6 which is provided on the upper surface of this waveguide layer and electrodes 7 and 8 for selectively performing current injection in the first and second active layers through the first and second clad layers. When a conduction is performed between a metal electrode 2 and the electrode 7, light of a wavelength of 5mum is emitted from the first active layer 3. In this case, as the wavelength of the first active layer 3 is larger than those of the second active layer 4 and the waveguide layer 5, the light of a wavelength of 5mum emitted from the first active layer 3 is waveguided to the end surface without being absorbed in the second active layer 4 and the waveguide layer 5, resonated in a Fabry-Perot mode and laser oscillation of a wavelength of 5mum is performed. |
| 公开日期 | 1987-09-29 |
| 申请日期 | 1986-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77346]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA LTD |
| 推荐引用方式 GB/T 7714 | KATSUTA HIROHIKO. Semiconductor laser. JP1987221185A. 1987-09-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。