半導体レ-ザ装置
文献类型：专利
| 作者 | 八木 哲哉 |
| 发表日期 | 1996-07-08 |
| 专利号 | JP2536044B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置 |
| 英文摘要 | PURPOSE:To decrease an operating voltage without decreasing light emitting efficiency, by forming a third clad layer into which carriers are introduced so that a band (valence band) is degenerated on the stripe shaped protruding part of a second clad layer. CONSTITUTION:This device is provided with the following parts: an n-type AlxGa1-xAs first clad layer formed on an n-type GaAs substrate 1; a p-type AlyGa1-yAs active layer 3 (x>y) formed on the layer 2; a p-type AlxGa1-xAs second clad layer 4 which is formed on the active layer 3 and has a forward mesa type stripe shaped protruding part 4a; a p-type AlxGa1-xAs third clad layer 5 which is diffused and formed on the stripe shaped protrusing part 4a and in which carriers are introduced so that a band (valence band) is degenerated; an n-type GaAs current blocking layer 6 which is formed on a region other than the stripe shaped protruding part 4a of the second clad layer 4; and a p-type GaAs contact layer 7 which is formed on the third clad layer 5 and the current blocking layer 6. |
| 公开日期 | 1996-09-18 |
| 申请日期 | 1988-04-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77350]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 八木 哲哉. 半導体レ-ザ装置. JP2536044B2. 1996-07-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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