Distributed feedback type semiconductor laser
文献类型：专利
| 作者 | NODA SUSUMU; KOJIMA KEISUKE; ARANISHI TOSHIO; HISAMA KAZUO |
| 发表日期 | 1987-10-12 |
| 专利号 | JP1987232186A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a distributed feedback type semiconductor laser, in which laser light having shorter wavelengths can be oscillated, by providing a sub-clad layer comprising AlGaAs, whose Al composition is higher than that of a guide layer aud lower than that of a clad layer, at an interface between the guide layer and the clad layer. CONSTITUTION:It is difficult to grow a clad layer 91 having a large Al composition on a guide layer 71 provided with a diffraction grating. Therefore, a sub- clad layer 8, whose Al composition is selected as x=0.3 that is lower than that of the clad layer 91, is provided. The sub-clad layer 8 can be directly grown on the guide layer 71, in which the diffraction grating is provided. On the sub-clad layer 8, the clad layer 91 having the large Al composition can be grown as a crystal. Thus the multiple guantum well distributed feedback type semiconductor laser can be implemented. |
| 公开日期 | 1987-10-12 |
| 申请日期 | 1986-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77352]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NODA SUSUMU,KOJIMA KEISUKE,ARANISHI TOSHIO,et al. Distributed feedback type semiconductor laser. JP1987232186A. 1987-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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