Semiconductor laser array
文献类型：专利
| 作者 | SEKIGUCHI YOSHINOBU; NOJIRI HIDEAKI; HASEGAWA MITSUTOSHI; MIYAZAWA SEIICHI; HARA TOSHITAMI |
| 发表日期 | 1988-11-29 |
| 专利号 | JP1988292688A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser array |
| 英文摘要 | PURPOSE:To obtain a dense scanning line pitch, whose adjustment is simple, by differentiating the light emitting points of a plurality of semiconductor lasers, which have the approximately same oscillating wavelengths, in the laminating directions. CONSTITUTION:Steps are provided on the upper surface of an n-GaAs substrate 22 so as to form three planes having the different heights. Namely, an n-GaAs buffer layer 23, a lower clad layer 24, an active layer 25, an upper clad layer 26 and a P-GaAs cap layer 27 are laminated. When currents are injected through electrodes 28a, 28b and 28c, laser light beams, which have the approximately same oscillating wavelengths, are outputted from light emitting points 29a, 29b and 29c. When the currents are controlled, the light emitting points are independently driven. Since the step of the substrate 22 are intactly kept at the light emitting points, the points are separated by every 5 mum in the laminating direction of semiconductors. When, a semiconductor laser array is used in a beam scanning apparatus, the difference in heights of the light emitting points in the laminating direction can be used for the interval of the scanning lines. Since the scanning lines can be horizontally kept with respect to the scanning direction, adjustment is simple. |
| 公开日期 | 1988-11-29 |
| 申请日期 | 1987-05-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77353]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | SEKIGUCHI YOSHINOBU,NOJIRI HIDEAKI,HASEGAWA MITSUTOSHI,et al. Semiconductor laser array. JP1988292688A. 1988-11-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。