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文献类型：专利
| 作者 | NAMISAKI HIROBUMI; HIRANO RYOICHI; HIGUCHI HIDEYO; OOMURA ETSUJI; SAKAKIBARA YASUSHI; SUZAKI WATARU |
| 发表日期 | 1988-10-06 |
| 专利号 | JP1988049919B2 |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To enable to obtain an oscillation stable even at a high temperature by forming a fixed semiconductor layer between a semiconductor substrate of the first conductivity type and the semiconductor layer of the second conductivity type in contact with an active region, in a semiconductor device having the narrow active region. CONSTITUTION:The semiconductor layer 13 of the first conductivity type wherein the carrier density is lower than that of the semiconductor layer 3 is formed between the semiconductor substrate 1 of the first conductivity type and the semiconductor layer 3 of the second conductivity type. By such a formation, the thyristor structure formed of the semiconductor layers 9, 4, 3, and 13 and the substrate 1, in the neighborhood of the active layer 7, becomes a structure difficult to turn ON not only at a low temperature but also at a high temperature. Therefore, reactive current does not flow, and then a stable laser output is obtained by the current flowing between electrodes 2 and 10. Thus, the oscillation stable even at a high temperature can be obtained. |
| 公开日期 | 1988-10-06 |
| 申请日期 | 1982-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77365]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NAMISAKI HIROBUMI,HIRANO RYOICHI,HIGUCHI HIDEYO,et al. -. JP1988049919B2. 1988-10-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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