Semiconductor laser element
文献类型：专利
| 作者 | MIYAUCHI NOBUYUKI; SAKII SHIGEKI; YAMAMOTO OSAMU; MORIMOTO TAIJI; HAYASHI HIROSHI; YAMAMOTO SABUROU |
| 发表日期 | 1985-12-02 |
| 专利号 | JP1985242689A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To improve life characteristics, performance characteristics and optical characteristics by increasing the reflectivity of a resonator end-surface on the back side to 90% or more and selectively setting the reflectivity of the resonator end-surface on the front side, from which laser beams are extracted, within a range of 10-20%. CONSTITUTION:A semiconductor laser wafer is cloven, and a Fabry-Perot resonator is shaped on a cleavage end-surface, thus manufacturing a semiconductor laser element. A cleavage end-surface on the front side from which laser beams are extracted is coated with an Al2O3 film 11 through an electron beam evaporation method, and the film thickness of the film 11 is set to approximately lambda/3. The film thickness of an Al2O3 film 11 and an amorphous silicon film 12 is set to approximately lambda/4 in the same manner to a cleavage end-surface on the back side, and the film 12 is coated with an Al2O3 film 11' in approximately lambda/2 film thickness, thus forming protective films of five layers in total. Accordingly, the protective films are shaped to the cleavage end-surfaces, thus reducing the reflectivity of the cleavage end-surface on the front side to 17% and the reflectivity of the cleavage end-surface on the back side to 95%, then enabling high-output operation without increasing threshold currents. |
| 公开日期 | 1985-12-02 |
| 申请日期 | 1984-05-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77369]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | MIYAUCHI NOBUYUKI,SAKII SHIGEKI,YAMAMOTO OSAMU,et al. Semiconductor laser element. JP1985242689A. 1985-12-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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