Semiconductor light-emitting device
文献类型：专利
| 作者 | OGITA SHOICHI; ISHIKAWA HIROSHI |
| 发表日期 | 1991-11-25 |
| 专利号 | JP1991263892A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To enable a carrier density distribution in a resonator length direction to be uniform with a simple electrode structure and obtain a narrow spectrum line width even at high output by allowing a groove width at a part along a portion where light intensity is strong in distribution of strong light intensity within a resonator to be larger than a width at a part along a portion where light intensity is weak. CONSTITUTION:For example, a width of a substrate 1 is 300mum, a length (length of the substrate 1) of a mesa-type layer structure 7 which becomes a resonator length is 1000mum, and its width is 1mum. With a groove 6, a width of a part where a length from both edges toward a central part is 350mum is 7mum, a width of a part where the length is 300mum at the central part is 14mum, and spread by 7mum to 14mum toward an outside. At each of the outside of two groove 6a, there are a light waveguide layer 3 which is not related to laser oscillation, an activation layer 4, and a clad layer 5 on the substrate 1 with a width where the central part 1 is approximately 135mum and both edge parts are 140mum. |
| 公开日期 | 1991-11-25 |
| 申请日期 | 1990-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77375]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | OGITA SHOICHI,ISHIKAWA HIROSHI. Semiconductor light-emitting device. JP1991263892A. 1991-11-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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