Manufacture of semiconductor laser
文献类型：专利
| 作者 | TAKAGI NOBUYUKI |
| 发表日期 | 1984-06-30 |
| 专利号 | JP1984113677A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To contrive not to generate more sags than have been prescribed at the angle part of the meltback layer by a method wherein a second semiconductor layer is etched so as to have an angle of 70-90 deg. to the surface of a semiconductor and a first semiconductor layer is etched for forming a groove to reach up to the semiconductor substrate. CONSTITUTION:A P type Ga1-xAlxAs current obstructing layer 12 is grown on a silicon doped N type GaAs substrate 11 by a liquid-phase epitaxial growth method and on the layer 12 is arranged an N type GaAs layer 13 by a liquid- phase growth method, for example. Then, a groove 15 is formed by performing a wet etching using an SiO2 film 14 as the mask. The shape of the groove, which is formed by this etching, is formed in such a condition that the angle alpha, which is made by the etched surface 13a of the N type GaAs substrate 13 and a 100 face, is 70-90 deg. On the other hand, the P type Ga1-xAlxAs current obstructing layer 13 and the etched surface 11a of the N type GaAs substrate 11 are a 111 face and the angle beta, which is formed by the 111 face and the 100 face, becomes 52.24 deg. After the SiO2 film 14 was removed, a Ga1-xAlx As layer 16 is formed on the GaAs substrate 13 and the groove 15 by a liquid- phase epitaxial growth. |
| 公开日期 | 1984-06-30 |
| 申请日期 | 1982-12-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77378]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | TAKAGI NOBUYUKI. Manufacture of semiconductor laser. JP1984113677A. 1984-06-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。