Semiconductor laser element
文献类型：专利
| 作者 | TAKIGUCHI HARUHISA; KANEIWA SHINJI; KUDO HIROAKI; YOSHIDA TOMOHIKO |
| 发表日期 | 1988-01-26 |
| 专利号 | JP1988018686A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain the specified value of an oscillated wavelength, by specifying the mixed crystal ratio of the mixed crystals of an active laser, a clad layer and a light guide layer in a semiconductor laser element in a predetermined rage, thereby guiding light into a guide layer, and performing sufficient feedback by a diffraction grating. CONSTITUTION:An N-clad layer 12, an active layer 13, a light guide layer 14, an intermediate layer 15 and a P-clad layer 16 are formed on a substrate 11 of a semiconductor laser element. A layer, on which a diffraction grating comprising In1-uGavP1-vAs (v = 2.04u-04) is formed, is attached in the vicinity of the layer 13. At a position of the layer, on which the diffraction grating is formed, on the opposite side with respect to the layer 13, a Ga1-wAlwAs layer or an In1-kGakP1-lAsl layer having the composition of nal>n>nG, where (n) is a refractive index, nal is the refractive index of the layer 13, and nG is the refractive index of the layer, on which the diffraction grating is formed, is inserted. Light is guided to the guide layer 14. Sufficient feedback is performed by the diffraction grating. Thue the oscillating frequency is made to be a specified value. |
| 公开日期 | 1988-01-26 |
| 申请日期 | 1986-07-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77383]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | TAKIGUCHI HARUHISA,KANEIWA SHINJI,KUDO HIROAKI,et al. Semiconductor laser element. JP1988018686A. 1988-01-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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