Semiconductor laser device and a method for fabricating the same
文献类型：专利
| 作者 | AIKI, KUNIO; HITACHI, LTD.; NAKAMURA, MICHIHARU; UMEDA, JUN-ICHI |
| 发表日期 | 1977-05-24 |
| 专利号 | US4025939 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and a method for fabricating the same |
| 英文摘要 | A semiconductor laser device comprises an n-type GaAs layer, an n-type GaAlAs layer disposed on the n-type GaAs layer, an optical confinement region comprising a laser active region consisting of GaAs disposed on the n-type GaAlAs layer, a first p-type GaAlAs region whose aluminum content is less than that of the n-type GaAlAs layer, disposed on said laser active region and a second p-type GaAlAs region whose aluminum content is less than that of the first p-type GaAlAs region, the surface of which opposite that disposed on said first p-type GaAlAs region is a periodically corrugated surface, a p-type GaAlAs layer whose aluminum content is more than that of said first p-type GaAlAs region, disposed on the periodically corrugated surface of the second p-type GaAlAs region, a p-type GaAs layer disposed on said p-type GaAlAs layer, and electrodes disposed on the n-type and p-type GaAs layers, respectively, and which has a very low threshold value for laser oscillation and which is fabricated with a very high yield rate. |
| 公开日期 | 1977-05-24 |
| 申请日期 | 1975-08-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77387]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | AIKI, KUNIO,HITACHI, LTD.,NAKAMURA, MICHIHARU,et al. Semiconductor laser device and a method for fabricating the same. US4025939. 1977-05-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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