Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | YOSHIDA TOMOHIKO; KANEIWA SHINJI; TAKIGUCHI HARUHISA; KUDO HIROAKI; MATSUI KANEKI |
| 发表日期 | 1987-03-26 |
| 专利号 | JP1987066694A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To manufacture a semiconductor laser which can drive a high output with low power by effectively suppressing a reactive current flowing to a buried layer by diffusing an impurity. CONSTITUTION:A P-type InP buffer layer 2, a non-doped InGaAsP active layer 3, and an N-type InP clad layer 4 are sequentially grown by a liquid-phase epitaxial growing method on a P-type InP substrate 1 to form a laser oscillating operation actuator. An SiNx film 9 is deposited to the prescribed thickness thereon to form a stripe pattern 10 of a photoresist. Further, with the film 9 as a mask it is etched to arrive at the layer 2 with Br-methanol solution of the prescribed concentration to form a mesa striped structure 11, and Zn is diffused to the prescribed depth by etching the layer 2. Thus, the layer 4 is grown on the overall surface of a wafer. The layer 4 and the first buried layer are separated by a diffused portion 8. Thus, a current flowing to the buried layer can be effectively suppressed by diffusing an impurity. |
| 公开日期 | 1987-03-26 |
| 申请日期 | 1985-09-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77391]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | YOSHIDA TOMOHIKO,KANEIWA SHINJI,TAKIGUCHI HARUHISA,et al. Semiconductor laser element and manufacture thereof. JP1987066694A. 1987-03-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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