Semiconductor laser device
文献类型：专利
| 作者 | KONO TOSHIHIRO; NAKATSUKA SHINICHI; ONO YUICHI; KAYANE NAOKI; KAJIMURA TAKASHI |
| 发表日期 | 1986-10-30 |
| 专利号 | JP1986244082A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To minimize a nonpoint aberration and avoid a return light noise and reduce a threshold current by a method wherein recessed parts, which are lower than a substrate surface, are provided outside a groove near the surface of a light emitting end and current blocking layers, whose conductive type is opposite to that of the substrate, are provided in stripe shape regions including the recessed parts outside the groove. CONSTITUTION:After recessed parts 2 are formed on a P-type GaAs substrate 1 by etching, N-type GaAs current blocking layers 3 are formed. Then a groove 4 is formed and a cladding layer 5, an activation layer 6, a cladding layer 7 and a cap layer 8 are successively made to grow. Then, after an N-type electrode 9 and a P-type electrode 10 are formed, a reflection plane is formed by cleavage. Therefore, the thicknesses of the cladding layer 5 and the activation layer 6 are different between the outside and the inside of the edges of the groove 4 near the surface of a light emitting end and a large difference of refractive indexes is produced so that a laser beam is confined and a nonpoint aberration is minimized. On the other hand, at the center part, both the cladding layer 5 and the activation layer 6 are thicker and a difference of refractive indexes between inside and outside the edges of the groove is small so that the oscillation spectrum becomes provided with multimode and a return light noise is avoided. |
| 公开日期 | 1986-10-30 |
| 申请日期 | 1985-04-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77393]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KONO TOSHIHIRO,NAKATSUKA SHINICHI,ONO YUICHI,et al. Semiconductor laser device. JP1986244082A. 1986-10-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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