Semiconductor laser
文献类型：专利
| 作者 | NAKATSUKA SHINICHI; SAITO KATSUTOSHI; KONO TOSHIHIRO; KAJIMURA TAKASHI |
| 发表日期 | 1988-11-17 |
| 专利号 | JP1988281487A |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To get rid of element failure caused by the deterioration of current constriction effect, and reduce a leak current caused by light, by a method wherein a p-n junction to constrict the current of a semiconductor laser is separated from a buried growth boundary surface, by providing a crystal surface before buried and grown with an n-type inverting region. CONSTITUTION:On an n-type GaAs substrate 1, the following are crystal-grown in order by MOCVD method; an n-type clad layer 2 of GaAlAs, an undoped active layer 3, a p-type clad layer 4, a p-type etching interruption layer 7, a p-type selective etching layer 8 and a p-type cap layer 9. Then, an SiO2 mask is formed, etching applying phosphoric acid system liquid is performed, in which the selective etching layer 8 outside stripes is left, and the residual selective etching layer is eliminated by heated hydrochloric acid. Thereby, the exact stop at the surface of the etching interruption layer 7 is enabled. Again by MOCVD method, an n-type GaAs 6 is buried, and eliminated after growth, by hydrofluoric system etching liquid. At that time, a junction is formed in a growth layer of the first time, and the characteristics are stabilized, by supplying n-type dopant material in order to invert the clad layer 4 side of the buried boundary surface into n-type. Further, this inverting layer 5 blocks a leak current of minority carrier generated in a light absorbing layer 6. |
| 公开日期 | 1988-11-17 |
| 申请日期 | 1987-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77395]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | NAKATSUKA SHINICHI,SAITO KATSUTOSHI,KONO TOSHIHIRO,et al. Semiconductor laser. JP1988281487A. 1988-11-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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