Semiconductor light emitting device and manufacture thereof
文献类型：专利
| 作者 | SHIMA KATSUTO |
| 发表日期 | 1986-03-27 |
| 专利号 | JP1986059888A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To use a large wafer in the manufacture of a lateral mode control type semiconductor layer by forming a projection strip for forming a curved smooth surface in parallel with an optical axis, using a vapor phase growing method thereon to form a desired layer structure, thereby preventing a linear defect from occurring due to a graft growth. CONSTITUTION:A CVD method is used on the (100) plane of an N type GaAs substrate 1 to form an SiO2 film layer 2, formed in a strip extended in (011) direction by using a photolithographic method as a mask, and the substrate 1 is chemically etched with the mixed solution of sulfuric acid including hydro gen peroxide and hydrogen peroxide in low density as an etchant. Them, a reverse trapezoidal shape is formed at the initial etching time, but as the etching proceeds, the surface becomes smooth curved surface to form a projection strip 1' extending in the (011) direction. After the layer 2 is dissolved and re moved, an N type AlGaAs clad layer 3, a P or N type GaAs active layer 4, a P type GaAs clad layer 5, and an N type GaAs cap layer 6 are sequentially formed by using a metal organic CVD method. |
| 公开日期 | 1986-03-27 |
| 申请日期 | 1984-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77397]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SHIMA KATSUTO. Semiconductor light emitting device and manufacture thereof. JP1986059888A. 1986-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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