Semiconductor laser device
文献类型：专利
| 作者 | FUKUDA HIROKAZU; SHINOHARA KOUJI; KAWABATA YOSHIO; NISHIJIMA YOSHITO; YAMAMOTO KOUSAKU |
| 发表日期 | 1983-09-01 |
| 专利号 | JP1983147188A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which has no variation in the thermal resistance at the junction between an element and a heat sink, heat dissipation and good reliability by composing electrodes arranged on an N type conductive region side of metal members having good adhesive strength to an insulating film. CONSTITUTION:An insulating film 3 made of SiO2 is covered on a compound semiconductor substrate 1 made of P type conductive PbSSe, the center is removed by etching in a stripe shape, with the film 3 as a mask an N type conductive region 2 is formed by a diffusing method. A gold (Au) deposited stripe electrode 21 which is electrically connected is formed onto the striped active region, a chromium (Cr) film 22 having excellent bonding strength with the film 3 is covered by a deposition method. The formed semiconductor laser element is fixed via indium (In) 7 on the heat sink base 6 made of Cu through the chromium film 22. |
| 公开日期 | 1983-09-01 |
| 申请日期 | 1982-02-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77401]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | FUKUDA HIROKAZU,SHINOHARA KOUJI,KAWABATA YOSHIO,et al. Semiconductor laser device. JP1983147188A. 1983-09-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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