半導体レーザ
文献类型：专利
| 作者 | 阿部 雄次; 大塚 健一; 杉本 博司; 松井 輝仁 |
| 发表日期 | 1997-05-30 |
| 专利号 | JP2656248B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To make it possible to set a coupling constant to a designed value with excellent reproducibility, by providing both surfaces of a diffraction grating layer with a semiconductor layer having a large energy gap, and forming parallel stripe trenches with a specified period. CONSTITUTION:On an active layer 3, the following are grown in order; a first semiconductor layer 4 whose energy gap is larger than the active layer 3, a diffraction grating layer 5 whose energy gap is larger than the active layer 3 and smaller than the first semiconductor layer 4, and a second semiconductor layer 6 whose composition is identical to the first semiconductor layer 4. On the whole surface of the above layer, parallel stripe trenches with a specified period are formed so as to reach the first semiconductor layer 4. Then a clad layer 7 is grown and a diffraction grating 11 is formed. As the photo coupling constant of the diffraction grating is determined by the thickness of the first semiconductor layer 4 and the diffraction grating layer 5, a semiconductor laser having a diffraction grating whose light coupling constant is set by a designed value can be obtained with excellent reproducibility. |
| 公开日期 | 1997-09-24 |
| 申请日期 | 1987-02-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77403]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 阿部 雄次,大塚 健一,杉本 博司,等. 半導体レーザ. JP2656248B2. 1997-05-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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