Semiconductor laser
文献类型：专利
| 作者 | YOSHIDA NAOTO; KONNO NOBUAKI; MIZUGUCHI KAZUO |
| 发表日期 | 1991-04-02 |
| 专利号 | JP1991076293A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To relax accuracy requirements for patterning by a method wherein two grooves in parallel are provided to a P-type clad layer as deep as required, the grooves are filled with a first insulator layer, and a contact opening is provided inside the first insulator layer for a ridge sandwiched between the grooves. CONSTITUTION:A P-type contact layer 7, a P-type buffer layer 6, and a P-type clad layer 5 are selectively etched. Thereby, two grooves 15 in parallel with each other are formed so deep as to extend from a P-side first electrode 8 to a prescribed point of the P-type clad layer 5. Then, a polyimide layer 10 is applied filling the grooves 15 and covering the P-side first electrode 8, which is turned into a first insulating layer by burning. A second insulator layer 11 of SiO2 is deposited on the polyimide layer 10, which is patterned. Then, the polyimide layer 10 is etched using the SiO2 layer 11 as a mask until a P-side stripe-like first electrode is exposed. By this setup, a contact opening 14 reaching the P-side stripe electrode can be formed. |
| 公开日期 | 1991-04-02 |
| 申请日期 | 1989-08-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77419]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | YOSHIDA NAOTO,KONNO NOBUAKI,MIZUGUCHI KAZUO. Semiconductor laser. JP1991076293A. 1991-04-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。