Semiconductor light emitting element
文献类型：专利
| 作者 | NISHI KENICHI |
| 发表日期 | 1985-09-27 |
| 专利号 | JP1985189983A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To obtain the titled element whereby a low threshold value current density, good temperature characteristic and the like can be obtained while noise light from a photo confinement layer is reduced by a method wherein the photo confinement layer is put in the quantum well structure having the quantum size effect of a monolayer or a multilayer. CONSTITUTION:A clad layer 31 and a barrier layer 32 are made of Al0.22Ga0.78As, and an active layer 33 and a well layer 34 are made of GaAs, then, an energy band end 35 is repeated at short periods in the photo confinement layer. The energy level in this photo confinement layer can be varied by varying the layer thickness of the well layer. On the other hand, the refractive index of the photo confinement layer is almost proportional to the energy gap, and the refractive index is almost at the average of those of the clad layer 31 and the active layer 33. The lowest level 36 is made higher than the average level 37 determined by the structure, and the average refractive index can obtain an average refractive index possible larger than the energy level 37. Thereby, the coefficient of photo confinement increases, few electrons come to overflow from the photo confinement layer at the time of high injection. Accordingly, noise light corresponding to the photo confinement layer does not generate, and stable laser oscillation can be yielded. |
| 公开日期 | 1985-09-27 |
| 申请日期 | 1984-03-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77421]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | NISHI KENICHI. Semiconductor light emitting element. JP1985189983A. 1985-09-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。