Semiconductor laser
文献类型：专利
| 作者 | NOMURA HIDENORI |
| 发表日期 | 1987-03-10 |
| 专利号 | JP1987054992A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve ultrahigh speed modulating characteristic by forming a confining layer of a high resistance semiconductor, and forming the buried layers in opposite conductivity types on different sides to an active layer. CONSTITUTION:After a high resistance enclosing layer 4 made of nondoped In0.53Al0.47As, an active layer 5 made of nondoped In0.74Ga0.26As0.56, a high resistance enclosing layer 6 made of nondoped In0.53Al0.47As, and the epitaxial layers are etched in mesa stripe shape, on a substrate 1 made of Fe-doped semi- insulating InP, a crystal structure having a buried layer 2 made of regrown Sn-doped InP, and a cap layer 3 made of Sn-doped In0.74Ga0.26P0.44 is formed. A diffused layer 7 diffused with Zn at one side of the layer 5 of the layers 2, 3 of the layer 5 is inverted in the conductivity type to P-type, positive and negative electrodes 8, 9 are formed on the layer 3, and 2-layer structure of Cr/Au is formed. Thus, a semiconductor laser having ultrahigh speed modulation characteristic of extremely small parasitic capacity is obtained. |
| 公开日期 | 1987-03-10 |
| 申请日期 | 1985-09-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77425]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NOMURA HIDENORI. Semiconductor laser. JP1987054992A. 1987-03-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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