Manufacture of semiconductor laser device
文献类型：专利
| 作者 | OTA YOICHIRO; YAMASHITA KOJI |
| 发表日期 | 1990-02-15 |
| 专利号 | JP1990045993A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To make an etching stopper layer unnecessary and to securely control a shape of a striped groove by forming an AlGaAs current blocking layer on a GaAs melt back layer. CONSTITUTION:An n-type AlGaAs lower clad layer 2, an AlGaAs active layer 3, an AlGaAs upper clad layer 4, a GaAs melt back layer 5, and an n-type AlGaAs current blocking layer 6 are formed on an n-type GaAs substrate 1 by epitaxial growth. The current blocking layer 6 is etched by an etchant which etches AlGaAs selectively, and then an upper section of a stripe groove 11 is formed. A lower section of the groove 11 is formed by melting back the layer 5 by an LPE furnace. Since compositions differ, the current blocking layer 6 is not melted back. Then a p-type AlGaAs cap layer 7, a p-type GaAs contact layer 8 and electrodes 9, 10 are formed. |
| 公开日期 | 1990-02-15 |
| 申请日期 | 1988-08-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77433]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OTA YOICHIRO,YAMASHITA KOJI. Manufacture of semiconductor laser device. JP1990045993A. 1990-02-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。