Semiconductor laser
文献类型：专利
| 作者 | ODA TATSUJI |
| 发表日期 | 1986-04-16 |
| 专利号 | JP1986074384A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent degradation of performance characteristics due to useless entrappment or reflection of light in a bent activation layer by a method wherein an activation layer is provided with a flat structure in a laser device of a hybrid structure wherein a refractive index guide and gain guide are combined. CONSTITUTION:The surface of a semiconductor substrate 21 is formed flat, whereon a first clad layer 22, activation layer 23 are formed, also flat. On the activation layer 23, a light-absorbing resion 35 is selectively formed, for the construction of a refractive index guide. A second clad layer 24 is formed to fill the light-absorbing region 35, whereafter a current-constricting region 27 is formed, by ion implantation, to serve as a gain guide structure. In this way, by building activation layers flat and free of curvature across the entire region along the length of the hybrid structure, degradation of performance characteristics is prevented that may otherwise be produced due to useless light entrapment. |
| 公开日期 | 1986-04-16 |
| 申请日期 | 1984-09-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77435]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | ODA TATSUJI. Semiconductor laser. JP1986074384A. 1986-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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