Semiconductor laser
文献类型：专利
| 作者 | ONO YUICHI; KASHIWADA YASUTOSHI; KAYANE NAOKI; KAJIMURA TAKASHI; KONO TOSHIHIRO |
| 发表日期 | 1986-06-02 |
| 专利号 | JP1986114587A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent defects from being produced in the interface of a current constricting layer and to obtain a high reliability, by depositing a crystal layer having the same conductivity, type as that of a semiconductor substrate on the substrate by means of the vapor phase growth, and successively depositing a crystal layer having the opposite conductivity type to that of the substrate by the vapor phase growth so as to provide the current constricting layer. CONSTITUTION:A P type GaAs layer 2 is deposited on a P type GaAs substrate 1 by the vapor phase growth. Subsequently, the kinds of impurities are changed so that an N type GaAs layer 3 is continuously deposited by the epitaxial growth. A V-shaped groove 4 is then formed, and a double hetero junction 5, 6, 7 and a cap layer 8 for an electrode are formed by the conventional liquid- phase growth. Electrodes 9 and 10 are further formed. According to this invention, a current constricting layer is not provided directly on the substrate, but the current constricting layer 3 is provided by means of the grown junction so that no crystal defect is produced in the interface between the layers 2 and 3. Accordingly, a high reliability can be obtained. |
| 公开日期 | 1986-06-02 |
| 申请日期 | 1984-11-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77439]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | ONO YUICHI,KASHIWADA YASUTOSHI,KAYANE NAOKI,et al. Semiconductor laser. JP1986114587A. 1986-06-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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