Semiconductor laser
文献类型：专利
| 作者 | HIRATA SHOJI; NARUI HIRONOBU |
| 发表日期 | 1992-07-28 |
| 专利号 | JP1992206982A |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve reliability and to enhance an output by microscopically altering the thickness of an active layer by suitably setting an interval between the side of a mesa protrusion and the side opposed thereto, and introducing a window structure in an SDH type semiconductor laser. CONSTITUTION:In an SDH type semiconductor laser in which a threshold value current is reduced, the thickness of a compound semiconductor layer is controlled in a spontaneous generation manner by using a migration effect in the case of an epitaxial growth to suitably set an interval between the side 2S of a mesa protrusion 2 and the side 3S opposed thereto, and thus the thickness of an active layer 5 is microscopically altered at the center 2A and the end 2B of the protrusion 2. Accordingly, a band gap Eg of an active layer 5 of a quantum well structure of about 100Angstrom or less is increased near the extending direction light emitting unit 2B of the protrusion 2 and decreased near the center 2A to form a so-called window structure in which a light oscillated in the center 2A is scarcely optically absorbed at the end, thereby reducing deterioration of the end, improving reliability and enhancing its output. |
| 公开日期 | 1992-07-28 |
| 申请日期 | 1990-11-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77447]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | HIRATA SHOJI,NARUI HIRONOBU. Semiconductor laser. JP1992206982A. 1992-07-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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