Semiconductor laser
文献类型：专利
| 作者 | KANENO, NOBUAKI |
| 发表日期 | 1992-12-22 |
| 专利号 | US5173913 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A semiconductor laser having a double heterojunction structure includes a first semiconductor cladding layer having a stripe-shaped groove, a semiconductor active layer disposed on the cladding layer and having an energy band gap narrower than that of the cladding layer, and a second semiconductor cladding layer disposed on the active layer and having an energy band gap wider than that of the active layer. The thickness of the active layer in the groove is larger than the thickness of the active layer outside the groove and the shape of the active layer has the shape of the groove. The thickness of the active layer is largest in the bottom of the groove and gradually becomes smaller toward the edges of the groove. The semiconductor laser can output a laser beam having nearly a circular cross-section at a low threshold current and is easily fabricated. |
| 公开日期 | 1992-12-22 |
| 申请日期 | 1991-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77458]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KANENO, NOBUAKI. Semiconductor laser. US5173913. 1992-12-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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