Superlattice structure semiconductor device
文献类型：专利
| 作者 | MITSUYU TSUNEO; OKAWA KAZUHIRO; KARASAWA TAKESHI |
| 发表日期 | 1991-01-29 |
| 专利号 | JP1991020096A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Superlattice structure semiconductor device |
| 英文摘要 | PURPOSE:To acquire good electrical and optical performance by providing a superlattice layer which is formed by laminating a plurality of thin zinc sulfide layers and thin zinc telluride layers on a buffer layer alternatively. CONSTITUTION:A device is composed of an indium phosphate single crystalline substrate 1, a superlattice layer 2 which is formed by laminating a plurality of zinc sulfide layers 2a and zinc telluride layers 2b, and a buffer layer which is formed by making epitaxial growth of cadmium sulfide. In this case, a lattice constant of cadmium sulfide approximately coincides with that of indium phosphorus or a substrate, which enables good epitaxial growth. The cadmium sulfide buffer layer 3 also shows a tendency of three dimensional island-shape growth immediately after beginning of growth; however, after a growth of several tens of Angstrom or more, it shifts to a two dimensional growth and a flat surface can be acquired at an atomic level. As a result, the superlattice layer 2 which has a grown on the buffer layer 3 grows two-dimensionally just after beginning of growth and a good and flat superlattice without defects can be acquired. Good electrical and optical characteristics can be realized in this way. |
| 公开日期 | 1991-01-29 |
| 申请日期 | 1989-06-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77460]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MITSUYU TSUNEO,OKAWA KAZUHIRO,KARASAWA TAKESHI. Superlattice structure semiconductor device. JP1991020096A. 1991-01-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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