Manufacture of semiconductor laser
文献类型：专利
| 作者 | OOTA YOICHIRO; KUME ICHIRO; TANAKA TOSHIO; TAKAMIYA SABURO |
| 发表日期 | 1987-07-18 |
| 专利号 | JP1987162384A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To recognize the position of an active window, by forming a recess in the region of a substrate where the active window is to be formed, vapor- phase growing layers thereon and forming sharp V-shaped grooves on the surface of the uppermost layer directly above the recess. CONSTITUTION:An epitaxial layer 112 is superposed on a basic layer 111 and a resist mask 12 is applied thereon so that recesses 18 having a shape of reversed trapezoid are formed. The mask is removed. An Al0.5Ga0.5As clad layer 13, Al0.1Ga0.9As active layer 14, an Al0.5Ga0.5As clad layer 15 and a contact layer 16 are grown thereon. By properly selecting the shape and dimensions of the recesses and thicknesses of the layers, sharp V-shaped grooves 19 are formed vertically to the light-emitting end face and the structure can be correctly divided into chips by these grooves. Each chip has an active window 17 with a fixed width. Therefore, deterioration in yield due to cleavage at incorrect position can be decreased. Further, since it is easy to recognize the position of the inactive window, electrodes can be positioned easily and formed with high precision. |
| 公开日期 | 1987-07-18 |
| 申请日期 | 1986-01-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77471]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OOTA YOICHIRO,KUME ICHIRO,TANAKA TOSHIO,et al. Manufacture of semiconductor laser. JP1987162384A. 1987-07-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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