Semiconductor laser
文献类型：专利
| 作者 | SUGAO SHIGEO |
| 发表日期 | 1990-03-16 |
| 专利号 | JP1990077183A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable all the part of a semiconductor device to have sufficient mechanical strength and to prevent breakage thereof during a packaging process by providing a contact layer of a second conductivity type over a semiconductor layer of the second conductivity type covering a semiconductor, layer of the first conductivity type and an active region which are deposited on a window formed in an insulating layer on a semiconductor substrate. CONSTITUTION:A double-hetero-junction is defined by an active layer 13 for providing an active region and buffer and clad layers 12 and 14 located under and on the active layer, respectively, while homo-junctions are defined by the sidewalls of the buffer layer 12 and the clad layer 14. Current is constricted to the opposite sides of the active layer 13 by the homo-junctions and an insulating layer 1 There is no need of providing a space between the N-type buffer, layer 12 and the P-type clad layer 14 for the purpose of decreasing the area of the homo-junction. Accordingly, no part of the device has insufficient mechanical strength and, therefore, it can be prevented from being broken during the packaging process. Since the homo-junction is defined only between the sidewalls of the buffer layer 12 and the clad layer 14, parasitic capacity is decreased and the device is allowed to operate at high speed. |
| 公开日期 | 1990-03-16 |
| 申请日期 | 1988-09-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77477]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SUGAO SHIGEO. Semiconductor laser. JP1990077183A. 1990-03-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。