Semiconductor laser device
文献类型：专利
| 作者 | KUBOTA, MASAYUKI |
| 发表日期 | 1992-12-22 |
| 专利号 | US5173915 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA A CORP. OF JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A variable wavelength light source using a semiconductor laser element suitable for use in optical communications is provided. Light emitted from one end surface of the semiconductor laser element is led along a path through a light wavefront converting element (e.g., a Fresnel lens) and a spatial light modulating element which are both formed in a waveguide layer, to a diffraction grating which is also formed in the waveguide layer. Light reflected from the diffraction grating is caused to travel back along the same path but in the opposite direction and to impinge on the semiconductor laser element. Wavelength selection of by the spatial light modulating element and the diffraction grating is utilized for generating and maintaining oscillation at a selected wavelength in the laser element. The wavelength of light is selected by selecting the wavelength of a surface acoustic wave generated the spatial light modulating element, i.e., by changing the frequency of a high frequency electrical signal applied to the modulating element. |
| 公开日期 | 1992-12-22 |
| 申请日期 | 1991-07-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77488]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA A CORP. OF JAPAN |
| 推荐引用方式 GB/T 7714 | KUBOTA, MASAYUKI. Semiconductor laser device. US5173915. 1992-12-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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