Semiconductor device and method of manufacturing the same
文献类型：专利
| 作者 | KASHIMA, YASUMASA; MUNAKATA, TSUTOMU |
| 发表日期 | 2003-05-27 |
| 专利号 | US6570189 |
| 著作权人 | OKI SEMICONDUCTOR CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device and method of manufacturing the same |
| 英文摘要 | A semiconductor device includes a substrate formed of a group III element and a group V element, a buffer layer having a thickness of at least 0.5 mum covering an the entire main surface of the substrate, and a selective-area growth layer grown selectively on the buffer layer. The buffer layer includes both the group III element and the group V element. The buffer layer is formed by metalorganic vapor-phase epitaxy. |
| 公开日期 | 2003-05-27 |
| 申请日期 | 1999-12-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77489]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI SEMICONDUCTOR CO., LTD. |
| 推荐引用方式 GB/T 7714 | KASHIMA, YASUMASA,MUNAKATA, TSUTOMU. Semiconductor device and method of manufacturing the same. US6570189. 2003-05-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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