Semiconductor laser
文献类型：专利
| 作者 | NISHI HIROSHI |
| 发表日期 | 1986-01-09 |
| 专利号 | JP1986003486A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the titled device of high maintetance in laser oscillation by relaxing the stress applied to the light emitting region of an active layer by a method wherein the part under the lowermost layer of double hetero structure is provided with a semiconductor layer of the same element-combination as that of this layer. CONSTITUTION:A P type GaAlAs layer 10 is formed on a P type GaAs substrate 1a, and P type GaAs layer 1b is formed thereon, further, an N type GaAs layer 2 is formed. A V-groove 9 is formed mesa-etching the N type GaAs layer 2 and the P type GaAs layer 1b in the part corresponding to the light emitting region. Next, a P type GaAlAs clad layer 3 is formed on the V-groove 9 and the N type GaAs layer. Then, a P type or N type GaAlAs active layer 4, an N type GaAlAs clad layer 5 and an N type GaAs layer 6 are formed and laminted, and an electrode 7 made of e.g. Ti/Pt/Au is formed thereon. An electrode 8 made of e.g. AuGe/Ni/Au is formed on the back of the P type GaAs substrate 1a. Finally, the light emitting surface is cleft, resulting in the completion of a semiconductor laser. |
| 公开日期 | 1986-01-09 |
| 申请日期 | 1984-06-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77491]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NISHI HIROSHI. Semiconductor laser. JP1986003486A. 1986-01-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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