Semiconductor light emitting device
文献类型：专利
| 作者 | SAKUTA MASAAKI; ARAI MICHIHIKO; MATOBA AKIHIRO |
| 发表日期 | 1982-05-24 |
| 专利号 | JP1982083070A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To control the current introduced between an n type source and a p type drain by a MOS or a junction gate by a method wherein an active layer of amphoteric impurity Si doped GaAs or AlGaAs controls the electric field and adjusts the diffusion distance of the minority carrier. CONSTITUTION:Provided on a semi-insulator GaAs substrate 10 are a pGaAs active layer 11 compensated with high Si concentration, an nAl0.3Ga0.7As 12 and 13, a p type layer 14 diffused with Zn to establish an ohmic contact for a drain 15, and a source 16. Light is generated in the active layer 11 sandwiched between a pn junction 17 and the drain 15 and the control thereof is effected by reversing the gate junction bias by using a gate 18 located on an insulator film 20. The active layer 11 is controlled so that the sum of and the difference between the acceptor and donor concentration are respectively 10-10/cm and 10-10/cm and is formed liquid phase epitaxially of GaAs or AlxGa1-xAs. By this, the effective distance of diffusion the minority carrier travels can be increased by adjusting the bias voltage between the source and drain, enabling light modulation or amplification. |
| 公开日期 | 1982-05-24 |
| 申请日期 | 1980-11-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77511]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | SAKUTA MASAAKI,ARAI MICHIHIKO,MATOBA AKIHIRO. Semiconductor light emitting device. JP1982083070A. 1982-05-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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