Semiconductor light emitting element
文献类型：专利
| 作者 | USHIJIMA ICHIRO |
| 发表日期 | 1988-11-09 |
| 专利号 | JP1988271987A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To reduce a loss of light toward a side part of an active region and improve element characteristics by providing an antimelt-back layer at upper and side parts of the active region. CONSTITUTION:An n-InP buffer layer 12, an InGaAsP active layer 13, the first p-InGaAsP antimelt-back layer 14, and a p-InP clad layer 15 are formed on an n-InP substrate 11 in order. After that, a silicon dioxide masking 23 is used in the direction of and a mesa is formed by chemical etching. And then, the p-InGaAsP antimelt-back layer 16, a p-InP current constriction layer 17, an n-InP layer 18, a p-InP layer 19, and a p-InGaAsP contact layer 20 grow one after another and a p-electrode 21 and an n-electrode 22 are mounted. As to the active layer 13, therefore, the melt-back at its upper part is suppressed by the first antimelt-back layer 14 and the melt-back at its end face is suppressed by the second antimelt-back layer 16. Thus, no irregularities are formed at an interface between the active layer 13 and the current constriction layer 17 and then, this configuration prevents a light from leaking outside out of the active layer and improves element characteristics such as external differential quantum efficiency. |
| 公开日期 | 1988-11-09 |
| 申请日期 | 1986-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77517]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | USHIJIMA ICHIRO. Semiconductor light emitting element. JP1988271987A. 1988-11-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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