Semiconductor light-emitting device
文献类型：专利
| 作者 | KANEDA KOICHI; USHIJIMA ICHIRO |
| 发表日期 | 1990-06-01 |
| 专利号 | JP1990143483A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To restrain a reduction in the luminous efficiency even under a high temperature, to maintain high output and to obtain a stable light emission by a method wherein a barrier against an electron transfer is provided by a high-concentration buried layer to lessen the transport factor of electrons and the injection rate of the electrons is made small by a high-concentration buried layer. CONSTITUTION:A high-concentration first conductivity type third buried layer 7 is provided between a second conductivity type second buried layer 6 and a first conductivity type fourth buried layer 8. That is, the side of the buried layers is formed into a pnppn thyristor structure. For this reason, when a P electrode 11 and an N electrode 12 are biased forward for a laser oscillation operation, electrons are injected from a third clad layer 9 in the layer 8, but part of the injected electrons is stopped from transferring to the layer 6 by a barrier against the electrons which is formed by the following layer 7. As a result, the turn-ON of a parasitic thyristor is suppressed and a leakage current due to the turn-ON of the thyristor can be significantly reduced. |
| 公开日期 | 1990-06-01 |
| 申请日期 | 1988-11-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77539]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KANEDA KOICHI,USHIJIMA ICHIRO. Semiconductor light-emitting device. JP1990143483A. 1990-06-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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