Semiconductor laser
文献类型：专利
| 作者 | KONNO NOBUAKI |
| 发表日期 | 1991-10-30 |
| 专利号 | JP1991244178A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the laser beam of a low threshold value and of an approximately circle form by forming a differential-level part having a forward mesa form on a semiconductor substrate of 100 plane and then forming a light emitting region of the laser beam on the slope of said part. CONSTITUTION:On a GaAs substrate 1 of 100 plane in which a differential-level part having a slope of 111B plane in 011 direction is formed by etching, there are formed an N-type GaAs layer 2, an N-type AlGaInP lower clad layer 3, a GaInP active layer 4, a P-type AlGaInP upper clad layer 5, an N-type GaInP buffer layer 6, and a region 11 in which Zn is diffused down to the portion between the layer 6 and the layer 5. Each growing layer is formed by a metal organic chemical vapor deposition(MOCVD) method. In this semiconductor laser, the part on the slope of a forward mesa among the active layers is made a light emitting region, so that the light emitting region can be reduced easily and a laser beam of an approximately circle form and of a low threshold value can be obtained as a result. |
| 公开日期 | 1991-10-30 |
| 申请日期 | 1990-02-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77541]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KONNO NOBUAKI. Semiconductor laser. JP1991244178A. 1991-10-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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