Semiconductor light-emitting device
文献类型：专利
| 作者 | ITO AKIRA; TADATOMO KAZUYUKI |
| 发表日期 | 1989-09-28 |
| 专利号 | JP1989243483A |
| 著作权人 | 三菱電線工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To obtain the GaInPAs light-emitting element using a GaP substrate by a method wherein the multilayer, provided on the strained superlattice located on the GaP substrate, is composed of a GaInPAs active layer, an AlGaInP- clad layer containing Al or a GaInP-clad layer containing no Al. CONSTITUTION:A strained superlattice layer is formed on a GaP substrate 1, and a multilayer having a double heterojunction, namely, an AlGaInP clad layer 3, a GaInPAs active layer 4 and an AlGaInP clad layer 5, are epitaxially grown successively from the top of the strained superlattice layer 2. As the GaInPAs active layer 4 is grown on the GaP substrate 1 in this structure, this growth can be made by providing the strained superlattice layer 2 on the GaP substrate As the GaP substrate 1 and the strained superlattice layer 2, which is made of a wide bandgap material, are transparent to the radient light coming from the GaInPAs active layer 4, and also as the GaP substrate 1 has a high thermal conductivity and an excellent heat-radiating property, there is no limitation in the picking-out direction of the emitted light when an element is formed, and as a result, the designing to the element is free. |
| 公开日期 | 1989-09-28 |
| 申请日期 | 1988-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77544]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電線工業株式会社 |
| 推荐引用方式 GB/T 7714 | ITO AKIRA,TADATOMO KAZUYUKI. Semiconductor light-emitting device. JP1989243483A. 1989-09-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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