Manufacture of semiconductor laser device
文献类型：专利
| 作者 | MEGURO MASAO; SUZUKI MITSUO |
| 发表日期 | 1986-11-28 |
| 专利号 | JP1986269389A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To enable the quality judgement of the active layer around a light emitting diode section in the step of manufacturing the wafer, by forming the testing light-emitting diode sections on a wafer, and by applying test voltage to the sections to judge whether or not light is emitted. CONSTITUTION:After a multi-layer grown layer 7 is formed on a wafer 1, the grown layer 7 is mesa-etched to form an optical waveguide path. At the same time when the waveguide is formed, testing light-emitting diode sections 14 are formed on positions representing respective regions of the wafer. When electrodes are formed layer, anode and cathode electrodes 19, 20 of the diode sections 14 are formed, and predetermined voltage is applied between the electrodes 19, 20 to test whether or not light is emitted. As a result of the testing, the wafer is estimated to be a good one when light is emitted. In this way, the wafer can be judged in itself before the wafer is made into a chip. |
| 公开日期 | 1986-11-28 |
| 申请日期 | 1985-05-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77557]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | MEGURO MASAO,SUZUKI MITSUO. Manufacture of semiconductor laser device. JP1986269389A. 1986-11-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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