Semiconductor laser element
文献类型：专利
| 作者 | MAMINE TAKAYOSHI |
| 发表日期 | 1983-07-09 |
| 专利号 | JP1983115878A |
| 著作权人 | SONY KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To form the titled laser element into a single mode to form it into a circular beam as well as to contrive improvement in its power by a method wherein each semiconductor layer is bent accurately and highly precisely along the stepping, and the confinement of light by the intermediate layer is relieved to some degree. CONSTITUTION:As chemical semiconductor layers 12-17 are epitaxially grown in vapor-phase one after another, a meltback can be prevented, and the generation of a crystal defect, the irregularity of shape and the deterioration in preciseness can also be eliminated. Also, as siad semiconductor layers 12-17 are accurately bent along the stepping 11b, current is concentrated mainly at the stepping 11b. The confinement of light is performed by the working region of the active layer 4 base on the curve is longitudinal and lateral directions and also base on the difference in refractive indexes on the interface of the intermediate layers 13 and 15, and the clad layers 12 and 16. By having a energy band between the clad layers 12 and 16, with which said confinement is performed, and the active layer 14 larger than that of the active layer, and by having an intermediary of the intermediate layers 13 and 15 which have the energy band smaller than that of the clad layers 12 and 16, the confinement of light is relieved, and the effect of widening the injection region of the carrier is generated, thereby enabling to improve the power of the titled laser element. |
| 公开日期 | 1983-07-09 |
| 申请日期 | 1981-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77561]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY KK |
| 推荐引用方式 GB/T 7714 | MAMINE TAKAYOSHI. Semiconductor laser element. JP1983115878A. 1983-07-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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