Manufacture of semiconductor device
文献类型：专利
| 作者 | TANAHASHI TOSHIYUKI; NAKAI SABUROU; NISHITANI YORIMITSU; UMEO ITSUO |
| 发表日期 | 1984-02-29 |
| 专利号 | JP1984036987A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To avoid the deformation of a groove, an unevenness, etc. in the semiconductor substrate by a method wherein the temperature of said semiconductor substrate is appropriately selected by the process of leaving the semiconductor substrate in high temperature before starting liquid epitaxial growth. CONSTITUTION:A p type InP semiconductor layer 2 is grown on the n type InP semiconductor substrate 1 by liquid epitaxial growth. Next, the groove is formed temperature is raised, and then the state is maintained for an hour after going up to 500 deg.C. Then, growth is started by decreasing the temperature, and sliding a carbon boat at 530 deg.C, and an n type InP clad layer 4A, an InGaAsP active layer 5A, and a p type InP clad layer 6 are epitaxially grown successively. Layers 4 and 5 are an n type InP layer and an InGaAsP layer which are not buried in the groove. |
| 公开日期 | 1984-02-29 |
| 申请日期 | 1982-08-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77565]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI,NAKAI SABUROU,NISHITANI YORIMITSU,et al. Manufacture of semiconductor device. JP1984036987A. 1984-02-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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