Semiconductor laser
文献类型：专利
| 作者 | NAMISAKI HIROBUMI; KONO MINORU |
| 发表日期 | 1992-04-09 |
| 专利号 | JP1992107977A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable energy loss due to mode conversion to be suppressed and wavelength change to be increased by providing a light switch for selecting either of two or more waveguide paths at a light-coupling part between an activation waveguide path layer and a branch side waveguide path. CONSTITUTION:A laser consists of an activation waveguide path 1 which is made of a gain medium which is formed on a semiconductor substrate, a branch side waveguide paths 2 and 3 with a diffraction grid, and alight switch which is formed among the activation waveguide path 1 and the branch side waveguide paths 2 and 3. Then, a current-injection type light switch is used as the light switch and laser light which enters from the activation waveguide path part 1 advances directly and is guided to the branch side waveguide path 3 in the case of non-injection to an electrode for light switch 5. On the other hand, when current is injected into the electrode for light switch 5, a refractive index of the light waveguide path layer directly below it is reduced and the laser light is entirely reflected and is guided to the branch side waveguide path 2. In this manner, by changing the amount of current injected into the electrode for light switch, it is possible to select the branch side waveguide path for guiding light, thus enabling energy loss due to mode conversion to be suppressed. |
| 公开日期 | 1992-04-09 |
| 申请日期 | 1990-08-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77574]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NAMISAKI HIROBUMI,KONO MINORU. Semiconductor laser. JP1992107977A. 1992-04-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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