Optical integrated device
文献类型：专利
| 作者 | NISHIMURA MICHIYO |
| 发表日期 | 1992-06-24 |
| 专利号 | JP1992177782A |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical integrated device |
| 英文摘要 | PURPOSE:To obtain high amplification factor, by making the wavelength wherein the gain of an optical amplification element has a peak coincide with the output wavelength of a light emitting element. CONSTITUTION:A DBR structure capable of selecting a wavelength by a diffraction grating is used, thereby giving loss to the oscillation wavelength of a first well layer 12 and selectively generating oscillation at the oscillation wavelength of a second well layer 14. In an optical amplification part, a reflectionless coat is formed on a single surface and the oscillation is delayed, thereby increasing the threshold current value before the reflectionless coat is formed. When a current is biased to the optical amplification part in the state of high injection, oscillation in an LED mode wherein the optical amplification part itself does not oscillate is obtained. That is, the oscillation wavelength of a semiconductor laser coincides with the peak of the optical amplifier. Thereby a high amplification factor of the optical amplifier can be obtained. |
| 公开日期 | 1992-06-24 |
| 申请日期 | 1990-11-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77581]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | NISHIMURA MICHIYO. Optical integrated device. JP1992177782A. 1992-06-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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