Light emitting element
文献类型：专利
| 作者 | KAYANE NAOKI; NAKAJIMA HISAO; OKAI MAKOTO; TSUJI SHINJI |
| 发表日期 | 1988-12-06 |
| 专利号 | JP1988299186A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Light emitting element |
| 英文摘要 | PURPOSE:To obtain a light emitting element in which a light distribution can be confined by disordering even in a wavelength band of 1-6mum by containing In but not containing P in the component element of a compound semiconductor film. CONSTITUTION:A P-type InP clad layer 2 (1mum thick), an undoped InGaA As/ InGaAs superlattice layer 3 (lnGaA As: 100Angstrom thick, InA As: 100Angstrom thick, each with 5 layers), an N-type InP clad layer 5 (5mum thick), and an N-type InGaAs layer 6 (0.5mum thick) are sequentially laminated by an organic metal vapor growing method on a P-type InP substrate Thereafter, Zn is diffused in a region 7 by a selectively diffusing method. The Zn-diffused section 4 of the superlattice layer becomes by disordering lnGaAlAs layer of mean composition. Then, it is covered with an insulating film 8, and an AnGeNi-Au electrode 9 is deposited. Subsequently, a Cr-Au electrode 10 is deposited on the rear face of the substrate, and isolated into chips by cleaving and scribing. When a current flows to the element, carrier is injected to the InGaAs layer of the layer 3 to radiate light. The emitted light wavelength is 55mum. |
| 公开日期 | 1988-12-06 |
| 申请日期 | 1987-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77584]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KAYANE NAOKI,NAKAJIMA HISAO,OKAI MAKOTO,et al. Light emitting element. JP1988299186A. 1988-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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