半導体発光装置
文献类型：专利
| 作者 | 大場 康夫; 菅原 秀人; 渡辺 美代子; 石川 正行 |
| 发表日期 | 1997-06-06 |
| 专利号 | JP2659937B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体発光装置 |
| 英文摘要 | PURPOSE:To manufacture a low cost visible light semiconductor laser which is made of InGaAlP and has excellent characteristics by a method wherein a current constriction structure and an optical waveguide structure are formed in a self-aligning manner by utilizing selective growth performed by MOCVD. CONSTITUTION:An N-type GaAs 1st buffer layer 12, an N-type InGaP 2nd buffer layer 13 and so forth are successively formed on an N-type GaAs substrate 11 by MOCVD to form a double-hetero water. Then a stripe-shape mask with 5 mum width is formed on a cap layer by photoetching. Then etching is carried out with mixed solution of hydrobromic acid, bromine and water to from a stripe-shape intermediate contact layer 17. 2nd cladding layer 16 is half-etched to form a stripe-shape mesa. Thereupon, selective etchant for InGaAlP is sulfuric acid or phosphoric acid which is applied at a temperature of 15-130 deg.C. Then, after a wafer is heated and kept in the vapor atmosphere of phosphorus and In at about 800 deg.C to remove a surface oxide film, a P-type GaAs contact layer 18 is made to grow over the whole surface by MOCVD. |
| 公开日期 | 1997-09-30 |
| 申请日期 | 1986-09-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77585]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 大場 康夫,菅原 秀人,渡辺 美代子,等. 半導体発光装置. JP2659937B2. 1997-06-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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