A semiconductor laser device
文献类型：专利
| 作者 | HAYAKAWA, TOSHIRO; SUYAMA, TAKAHIRO; TAKAHASHI, KOSEI; KONDO, MASAFUMI |
| 发表日期 | 1989-07-05 |
| 专利号 | EP0323251A2 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | A semiconductor laser device |
| 英文摘要 | A semiconductor laser device containing a laser oscillation-operating area which comprises a Ga1-xAlxAs (0≦x≦1) quantum well active layer (16), Ga1-yAlyAs optical guiding layers (15,17) interposing the quantum well active layer therebetween, and Ga1-zAlzAs cladding layers (14,18) superposed on the optical guiding layers, respectively, wherein the AlAs mole fraction y at the area of each of the optical guiding layers (15, 17) positioned in the vicinity of the interface of the optical guiding layers and the quantum well active layer (16) meets the relationships y-x ≧ 0.3 and z-y ≦ 0.25. |
| 公开日期 | 1989-07-05 |
| 申请日期 | 1988-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77589]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HAYAKAWA, TOSHIRO,SUYAMA, TAKAHIRO,TAKAHASHI, KOSEI,et al. A semiconductor laser device. EP0323251A2. 1989-07-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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