Semiconductor laser element
文献类型：专利
| 作者 | IMAI HAJIME |
| 发表日期 | 1988-04-07 |
| 专利号 | JP1988077183A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To facilitate a phase control thereby to obtain a high output and to easily manufacture a semiconductor laser element by providing an optical waveguide parallel to each other perpendicular to the oblique sides of a triangle of a laser element forming chip of a right angle isosceles triangular shape, and regulating the length of an electrode for connecting waveguides. CONSTITUTION:A voltage for operating a laser element is applied between the electrode 21 of the element and an electrode 19 of the bottom. Then, the laser light emitted by this application of voltage is moved along the direction of an arrow A on the electrode 21, and emitted from the oblique side 20 of the chip toward the front surface. The length of a distance l between the electrodes 21 is easily regulated at the time of designing and it is easy to make a control so that a diffraction grating is formed at the center of the distance. Thus, the phase of the light emitted from the laser element can be easily controlled by controlling the phase by varying the pitch of the diffraction grating at the center O of a conventional diffraction grating. |
| 公开日期 | 1988-04-07 |
| 申请日期 | 1986-09-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77608]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | IMAI HAJIME. Semiconductor laser element. JP1988077183A. 1988-04-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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