Semiconductor light emitting device and manufacture thereof
文献类型：专利
| 作者 | DOUMEN MEGUMI; ANAYAMA CHIKASHI |
| 发表日期 | 1992-08-14 |
| 专利号 | JP1992225585A |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To increase relatively a refraction factor of an active layer in an inclined section and reduce relatively its electrical resistivity, confine laser oscillation light and constrict current by making larger the width of a quantum well of an active layer above the inclined section than that of a quantum well of an active layer in the upper part of a mesa top section and the lower part of a mesa bottom section. CONSTITUTION:An n type AlGaInP lower part clad layer 4 is formed, for example, on an n type mesa-shaped GaAs substrate 2 which is provided with a mesa top section and a mesa bottom section and an inclined section clamped by these top and bottom sections on the surface. The layer thickness of a GaInP well layer 6 and an AlGaInP barrier layer 8 of an MQW (multiple quantum well) active layer 10 formed above the inclined section C of the mesa-shaped GaAs substrate is arranged to be greater than that of the GaInP well layer 6 and the AlGaInP barrier layer 8 formed above a mesa top section A and a mesa bottom section B on both sides. |
| 公开日期 | 1992-08-14 |
| 申请日期 | 1990-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77627]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | DOUMEN MEGUMI,ANAYAMA CHIKASHI. Semiconductor light emitting device and manufacture thereof. JP1992225585A. 1992-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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