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文献类型：专利
| 作者 | NOMURA HIDENORI; SUGIMOTO MITSUNORI |
| 发表日期 | 1988-04-20 |
| 专利号 | JP1988018876B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To contrive inhibition of a high mode oscillation and to enable to perform a stabilized oscillation of high output by a method wherein the first and the second clad regions having a different refractive index are provided on the clad region. CONSTITUTION:On the semiconductor substrate 1 having a stripe-forming mesa structure 1a, an active semiconductor layer 2 having an active region 2a, the first clad region 3, the second clad region 4, the third clad region 5 and an electrode forming layer 6 are formed by performing an epitaxial growth. Besides, an N-side and a P-side electrodes 8 and 7 are formed on the substrate 1 and the layer 6, and the buried type double heterojuncton laser element is constituted. The clad regions 3 and 4 of the laser element have a different refractive index respectively, the clad region 3 which comes in contact with the active region 2a has the thickness thinner than the width of the active region 2a at the horizontal direction section which comes in contact with the active region 2a and the refractive index of the clad region 4 which comes in contact with the clad region 3 is increased. |
| 公开日期 | 1988-04-20 |
| 申请日期 | 1980-06-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77634]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | NOMURA HIDENORI,SUGIMOTO MITSUNORI. -. JP1988018876B2. 1988-04-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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