Semiconductor laser device
文献类型：专利
| 作者 | NUMAI TAKAAKI; MITO IKUO |
| 发表日期 | 1988-12-06 |
| 专利号 | JP1988299390A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a lambda/4 shift type DFB laser having a good yield by making the pitch of the diffraction grating near the phase shift region smaller than the pitch of the diffraction grating corresponding to the Bragg wavelength. CONSTITUTION:On an N-type In substrate 100, a secondary lambda/4 shift diffraction grating is formed using the electron beam lithography. The period is 4800Angstrom in the region to 100mum from the end face, and in the remaining region including the lambda/4 shift position, the period is 3000Angstrom at both sides of the lambda/4 shift position, which is made larger in the nearer position to the end face and 4800Angstrom at the place which is apart from the end face by 100mum. Then, a non-doped InP guide layer 120, an N-type InP buffer layer 130, a non-doped active layer 140 and a P-type clad layer 150 are sequentially grown. With this, a lambda/4 shift type DFB laser having a good yield is obtained. |
| 公开日期 | 1988-12-06 |
| 申请日期 | 1987-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77639]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NUMAI TAKAAKI,MITO IKUO. Semiconductor laser device. JP1988299390A. 1988-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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