Semiconductor light-emitting element
文献类型：专利
| 作者 | MATSUOKA TAKASHI; SASAKI TORU; KATSUI AKINORI |
| 发表日期 | 1990-10-01 |
| 专利号 | JP1990246175A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To obtain a good-quality crystal whose defect is extremely small by a method wherein a crystal which is lattice-matched to a substrate is grown epitaxially on the substrate. CONSTITUTION:An undoped ZnSSe active layer 8 and a nitrogen-doped p-type ZnSSeTe clad layer 9 are composed of an epitaxially grown semiconductor crystal layer which is lattice-matched to a substrate. A composition of the ZnSSeTe clad layer is selected in such a way that a band-gap energy difference between the clad layer and the active layer becomes large. An overflow of carriers is not caused when an electric current is injected when the band-gap energy difference between the active layer and the clad layer is larger. As a result, a large electric current can be injected; it is possible to obtain a semiconductor light-emitting element which emits light of a wide wavelength region from a visible region to an ultraviolet region. |
| 公开日期 | 1990-10-01 |
| 申请日期 | 1989-03-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77648]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | MATSUOKA TAKASHI,SASAKI TORU,KATSUI AKINORI. Semiconductor light-emitting element. JP1990246175A. 1990-10-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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