Manufacture of semiconductor laser
文献类型：专利
| 作者 | OKAZAKI JIRO |
| 发表日期 | 1992-02-19 |
| 专利号 | JP1992049687A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To form a metal barrier film uniformly on the whole surface by a method wherein eaves in an inverted mesa shape are eliminate at edges which partition a recessed part. CONSTITUTION:An n-type InP clad layer 2, an InGaAsP active layer 3 and a p-type InP clad layer 4 are grown on an n-type InP substrate An SiO2 film 5 and a photoresist film 6 are formed on them. Then, the SiO2 film 5 is patterned by making use of the photoresist film 6 as a mask; eaves in a forward mesa shape are produced. Then, the clad layer 4, the active layer 3 and the clad layer 2 are etched by making use of the photoresist film 6 and the SiO2 film 5 as a mask; and a mesa is formed. Then, the SiO2 film 5 is etched: and the eaves are removed. Then, the photoresist film 6 is removed; and a high-resistance InP buried layer 7 which buries the SiO2 film 5 and the mesa is formed. Then, when the SiO2 film 5 is removed, a recessed part 7A is formed, and edges of the buried layer 7 which partitions the recessed part are formed to be a forward tape shape. Then, an insulating film 8 composed of SiO2 is formed; it is etched; an opening in a stripe shape is formed; and the top face of the mesa shape is exposed again. |
| 公开日期 | 1992-02-19 |
| 申请日期 | 1990-06-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77654]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | OKAZAKI JIRO. Manufacture of semiconductor laser. JP1992049687A. 1992-02-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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